关于Kazuo Nakajima“新型硅单晶铸造法”系列学术讲座通知

发布者:系统管理员发布时间:2019-10-08浏览次数:541

报告人: Kazuo Nakajima

报告时间:2019年10月14日起每周一下午15点30分

报告地点: 浙江大学玉泉校区硅材料国家重点实验室1号楼104会议室

邀请人: 杨德仁 院士

报告主题:

10月14日

1. Development of High-Quality Crystals for III-V Quaternary Optical Semiconductors and Solar Cell Silicon and Their Industrial Applications. (This is the presentation for Laudise Prize)

10月21日

2. Growth of high-quality Si ingots for solar cells on the view point of Basic ingot growth and crystallographic quality of Si crystals for solar cells

10月28日 3. Growth of high-quality Si ingots for solar cells on the view point of The dendritic cast method

11月4日 4. Growth of high-quality Si ingots for solar cells -The conventional cast method, High performance (HP) cast method and Mono-like cast method

11月11日 5. Growth of high-quality Si ingots for solar cells -Growth of Si ingots using cast furnaces by the NOC method

11月18日 6. Growth of high-quality Si ingots for solar cells using the noncontact crucible method -How to establish the low-temperature region in a Si melt--Performance of p-type solar cells