题 目：Orders of magnitude reduction in dislocation density in GaN grown on Si(111) by nano lateral epitaxial overgrowth
报告人：Prof. Chua Soo Jin
时 间：2007年10月25日（星期四），9：50-：11：30
地 点：曹光彪大楼326
主持人：浙江大学硅材料国家重点实验室叶志镇教授
联系人：朱丽萍副教授 电话：87953139
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Chua Soo Jin教授简介
Chua Soo Jin is Professor of Optoelectronics at the Department of Electrical and Computer Engineering, National University of Singapore (NUS). He is also Deputy Executive Director at the Institute of Materials Research & Engineering (IMRE), and conducting research on GaN MOCVD and OLED. His research area is in optoelectronics and has published over 230 papers in international journals and authored/co-authored 40 patents with 22 of them granted. He has received awards for Outstanding Contribution to Research, Excellent Teacher and also as an Outstanding University Researcher in 1996, 1998 and 1999 respectively. He is the inventor of the Quantum dot White LED and the first to demonstrate the Quantum Dot Photodetector. His interaction with industry has been fairly extensive, providing consultancies to companies in Singapore and in the region. Concurrently, he serves as the Deputy Director of the Singapore-MIT Alliance, a position he has held since the Alliance was formed in 1999.
Prof. Chua is Sr. member of IEEE. He served as Chairman of IEEE, Singapore Chapter from 1984 to 1986 and as Chairman of Education Committee, Region 10 from 1987 to 1988 and Vice-chairman of SPIE from 95-97. In 1978, he worked for the Standard Telecommunications Labs, Harlow, UK. In 1981, he spent a year at the Fraunhofer Institute of Semiconductor Technology, Munich under a German Exchange Scholarship (DAAD). He was a Visiting Fellow of Japan Society for the Promotion of Science in 1988 and of the British Council in 1990.
