报告内容：Trends, Challenges and outlook for Ge/III-V CMOS Technologies and Applications
报告人：Cor Claeys
时间：3月19日上午10点
地点：硅材料国家重点实验室1号楼会议室（104室）
邀请人：杨德仁
摘要：The quest for higher performance of deep submicron CMOS devices has for more than a decade triggered research towards the use of high-mobility substrates to replaced silicon. Not only Ge-based technologies but also III-V semiconductors have been extensively studied and already showed their strong potential.This manuscript discusses the present status and challenges in relation to their future implementation in applications and systems.
主讲人介绍：Cor Claeys, received the B.S., M.S. and Ph.D. degrees in electrical engineering from KU Leuven in Belgium. His doctoral thesis work was on defect engineering for Charge Coupled Devices. After graduation he remained at the KU Leuven as research assistant and staff member of the ESAT Laboratory. In 1984 he joined imec, the newly founded microelectronics research centre in Leuven, Belgium, as head of silicon processing, responsible for process development and applications in CCDs, silicon sensors, CMOS, non-volatile memories, SOI-CMOS and BiCMOS. In 1990 he became head of the research group on Radiation Effects, Cryogenic Electronics and Noise Studies. Presently, as Director Business Growth & Emerging Markets, he is responsible for Strategic Relations. Since 1990 he is also a Professor in material science at the KU Leuven.His main interests are semiconductor technology, device physics, low frequency noise phenomena, radiation effects and defect engineering and material characterization. He authored and co-authored 14 book chapters, over 1100 technical papers and is author or co-author of more than 900 presentations at international Conferences and Symposia. He is editor or co-editor of more than 50 Conference Proceedings.
He has been project manager for a large number of European (SPECTRE, ACCES, STAR, NANOCMOS, PULLNANO, EUROSOI, SINANO, NANOSIL, SEANET, PRINS, NANOFUNCTION, etc.) research projects related to silicon technology and device physics. He also managed projects for the European Space Agency (ESA) related to the development of radiation detectors and radiation hardness of semiconductor devices.
He is a Fellow of IEEE and also a Fellow of the Electrochemical Society. He was the recipient of the IEEE Third Millennium Medal and received in 2004 the Electronics Division Award.
