报告题目: Low-dimensional-structure devices for future electronics
报告人: Shunri Oda
报告时间: 2018年8月16日下午1点30分
报告地点: 浙江大学玉泉校区硅材料国家重点实验室1号楼二楼会议室
邀请人: 皮孝东教授
报告摘要:
One of the major application targets for future electronics is wearable communication tools with low-power consumption. Tunnel field-effect-transistors (TFET) are promising since extremely low-voltage operation of switching beyond the limitation of CMOS devices would be possible. 2D materials and 1D nanowires attract attention not only because these materials would be suitable for the fabrication of TFETs, but also various novel application such as sensors, displays would be possible.Quantum computing is no longer a future technology. Recent advances in D-Wave computers based on quantum annealing and superconducting devices, and the demonstration of long spin decoherence times in isotopically-enriched Si qubits, have accelerated the research and development of this technology. The remaining challenge is large scale integration of qubits. Physically-defined coupled quantum dots (QDs) on silicon-on-insulator substrates are promising for multiple scaled qubits.In this seminar, we discuss recent progress of 0D (quantum dots), 1D (nanowires) and 2D atomic-layer materials devices.
报告人简介:
Shunri Oda (M'89, SM'11, F'12) received the B. Sc degree in physics, the M. Eng. and Dr. Eng. degree from Tokyo Institute of Technology in 1974, 1976 and 1979, respectively.
He is a Professor in Department of Physical Electronics and Quantum Nanoelectronics Research Center, Tokyo Institute of Technology. His current research interests include fabrication of silicon quantum dots by pulsed plasma processes, single electron tunneling devices based on nanocrystalline silicon, ballistic transport in silicon nanodevices, silicon based quantum information devices, and NEMS hybrid devices. He has authored more than 700 technical papers in international journals and conferences including 200 invited papers. He edited a book (with D. Ferry) “Silicon Nanoelectronics” (CRC Press, 2006) and “Nanoscale Silicon Devices” (CRC Press, 2015).
Prof. Oda is a Fellow of IEEE and Japan Society for Applied Physics, and a member of Electrochemical Society and Materials Research Society. He is a Distinguished Lecturer of IEEE Electron Devices Society.
